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Flash Memory Chip K9F5608U0D-PCB0商品スペック

K9F5608U0D-PCB0 - 32M x 8 Bit NAND Flash Memory - Samsung semiconductor

 


GENERAL DESCRIPTIO:

Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8M bit capacity.  The device is offered in 1.8V, 2.65V, 3.3V Vcc.  Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market.  A program operation can be performed
in typical 200µs on a 528-byte page  and an erase operation can be performed in typical 2ms on a 16K-byte block.  Data in the page
can be read out at 50ns cycle time per byte.  The I/O pins serve as the ports for address and data input/output as well as command
input.   The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal
verification and margining of data.   Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.      

Flash Memory Chip K9F5608U0D-PCB0製品の写真
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